Photo Courtesy: nenews
Guwahati: Researchers at the Indian Institute of Technology Guwahati have developed a new method to improve perovskite semiconductors. By using molecular interface engineering, the team successfully enhanced the efficiency and stability of perovskite solar cells and resistive-switching memory devices.
Perovskites are promising materials for energy and computing, but they often struggle with surface defects and environmental sensitivity. These issues lead to charge trapping, performance degradation, and inconsistent switching in memory applications. To solve these problems, a team led by Professor Parameswar K. Iyer applied ultrathin layers of specially designed organic molecules between the semiconductor layers.
These 10-15 nanometer layers act as a bridge that controls electrical charge behavior and minimizes structural defects. This strategic engineering allowed solar cells to reach a conversion efficiency of 25.73 percent. The devices also showed significant durability, maintaining 90 percent of their initial performance during ambient storage and 75 percent under heat and light stress.
The research demonstrates that this same material can be adapted for memristor devices used in neuromorphic computing. By stabilizing the interfaces, the IIT Guwahati team has moved these perovskite technologies closer to reliable, real-world use for both renewable energy and advanced non-volatile memory applications.
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